Title :
Piezoelectrically Induced Polarization and Charge in InN-Based Heterostructures
Author :
Hasan, Md Tanvir ; Islam, Md Fahimul ; Bhuiyan, Ashraful G. ; Islam, M.R. ; Yamamoto, A.
Author_Institution :
Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol.
Abstract :
Theoretical analysis and calculation of polarization, piezoelectric field and sheet charge density of InN-based heterostructures have been studied as a function of lattice mismatch induced strain. Theoretical investigation shows that polarity of the grown structure plays substantial influence on charge density and electron confinement. A high sheet charge density and strong electron confinement at specific interfaces of the InN-based heterostructures are observed as a consequence of piezoelectric polarization and spontaneous polarization effects.
Keywords :
indium compounds; piezoelectricity; polarisation; wide band gap semiconductors; InN; electron confinement; heterostructures; lattice mismatch induced strain; piezoelectric field; piezoelectric polarization; sheet charge density; spontaneous polarization effects; Capacitive sensors; Electrons; Gallium nitride; HEMTs; Lattices; Piezoelectric films; Piezoelectric materials; Piezoelectric polarization; Semiconductor films; Stress;
Conference_Titel :
Electrical and Computer Engineering, 2006. ICECE '06. International Conference on
Conference_Location :
Dhaka
Print_ISBN :
98432-3814-1
DOI :
10.1109/ICECE.2006.355336
