Title :
CMOS technology for low voltage/low power applications
Author :
Davari, Bijan ; Dennard, Robert H. ; Shahidi, Ghavam G.
Author_Institution :
Semicond. Res. & Dev. Center, IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
In this paper, the scaled CMOS as the ideal technology for the low power revolution, is discussed. It is shown that by the proper scaling of the CMOS devices, improved performance, power, and density can be achieved SIMULTANEOUSLY. The above scaling is made possible by; the reduction of the supply voltage, and the improved manufacturing tolerances and minimum dimensions. The reduction of the supply voltage is needed to lower the power dissipation per device and to maintain adequate reliability at improved performance. The CMOS technologies ranging from 0.25 μm CMOS @ 2.5 V down to 0/1 μm @ 1.XV on bulk and SOI (Silicon On Insulator) are presented. Over two orders of magnitude improvement in power x delay (mW/MIPS) is expected by the scaling of CMOS down to the 0.1 μm (Leff) regime
Keywords :
CMOS integrated circuits; application specific integrated circuits; delays; integrated circuit reliability; integrated circuit technology; silicon-on-insulator; 0.1 to 0.25 micron; 1.0 to 2.5 V; CMOS technology; SOI; low power applications; low voltage applications; manufacturing tolerances; power dissipation; reliability; scaled CMOS; supply voltage; Batteries; CMOS technology; Circuits; Cooling; Delay; Low voltage; Maintenance; Power dissipation; Power system reliability; Silicon on insulator technology;
Conference_Titel :
Custom Integrated Circuits Conference, 1994., Proceedings of the IEEE 1994
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-1886-2
DOI :
10.1109/CICC.1994.379778