Title :
Comparison of calculation techniques ofconstant VSWR impedance circle: evaluation of power transistors robustness
Author :
Blanchet, Floria ; Pache, Denis ; Bousbia, Hind ; Barataud, Denis ; Nebus, Jean-Michel
Author_Institution :
Central CAD, STMicroelectron., Crolles
Abstract :
This paper determines the locus of points of constant output voltage standing wave ratio (VSWR) around the load optimal impedance at the fundamental frequency. The proposed resolution has no hypothesis and there is a solution for whatever impedance. This resolution is very helpful to determine the power transistors robustness. Some measurements results are presented on a Si/SiGe HBT of STMicroelectronics technology. The measurements are realized on two multi-harmonic load-pull test-benches: one passive and one active
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; power bipolar transistors; silicon; Si-SiGe; constant VSWR impedance circle; constant output voltage standing wave ratio; heterojunction bipolar transistors; load optimal impedance; multiharmonic load-pull test-benches; power transistors; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance; Power transistors; Reflection; Robustness; Silicon germanium; Testing; Voltage;
Conference_Titel :
Research in Microelectronics and Electronics 2006, Ph. D.
Conference_Location :
Otranto
Print_ISBN :
1-4244-0157-7
DOI :
10.1109/RME.2006.1689892
