Analysis of the Substrate Noise Effects due to DC-DC Converter Integration

Author

Vinella, Rosa Maria ; Antonicelli, Roberto

Author_Institution

Dipt. di Elettrotecnica ed Eletronica, Politecnico di Bari

fYear

0

fDate

0-0 0

Firstpage

49

Lastpage

52

Abstract

Substrate noise mechanisms caused by the integration of a DC-DC converter into a 0.13 mum CMOS technology integrated circuit are investigated in order to provide designers with guidelines to improve sensitive analog/RF circuits isolation. In particular, the effects of the DRIFTMOS technological process and the dependence of substrate noise coupling on physical separation distance, floorplanning and introduction of guarding structures are fully described

Keywords

CMOS analogue integrated circuits; DC-DC power convertors; PWM power convertors; integrated circuit noise; 0.13 micron; CMOS technology; DC-DC converter integration; DRIFTMOS technological process; RF circuit isolation; analog circuit isolation; substrate noise coupling; substrate noise effects; substrate noise mechanisms; Analog integrated circuits; CMOS analog integrated circuits; CMOS integrated circuits; CMOS technology; DC-DC power converters; Guidelines; Integrated circuit noise; Integrated circuit technology; Isolation technology; Radiofrequency integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Research in Microelectronics and Electronics 2006, Ph. D.

Conference_Location

Otranto

Print_ISBN

1-4244-0157-7

Type

conf

DOI

10.1109/RME.2006.1689893

Filename

1689893