Title :
Novel fabrication technique for single electron devices
Author :
Bouchiat, V. ; Vion, D. ; Esteve, D. ; Devoret, M.H.
Author_Institution :
CEA, Centre d´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
Abstract :
We present a new method for fabricating multilayer single-electronic circuits with vias, crossings and reduced cross-capacitances. A single electron transistor (SET) was fabricated with this method and successfully operated. Its intrinsic charge noise, 3/spl times/10/sup -4/ e//spl radic/(Hz) at 10 Hz, matches that of other SETs.
Keywords :
MIM devices; charge measurement; electrometers; electron beam lithography; photolithography; polymer films; quantum interference devices; semiconductor device noise; single electron transistors; sputter etching; tunnel transistors; 10 Hz; Al-AlO-Al; RIE; crossings; electron beam lithography; fabrication technique; full 3D features; intrinsic charge noise; multilayer single-electronic circuits; optical lithography; polyimide films; reduced cross-capacitances; sensitive electrometer; single electron devices; single electron transistor; tunnel junctions; vias; Charge measurement; Circuits; Current measurement; Fabrication; Joining processes; Low-frequency noise; Noise measurement; Polyimides; Single electron devices; Single electron transistors;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location :
Braunschweig, Germany
Print_ISBN :
0-7803-3376-4
DOI :
10.1109/CPEM.1996.547407
