Title :
Prospect of soft switching power converter technologies
Author :
Trivedi, M. ; Shenai, K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Abstract :
This paper reports a detailed study of hard and soft-switching performance of high power unipolar and bipolar silicon transistors. Extensive measurements and rigorous two-dimensional (2-D) simulations are used to understand the switching dynamics of power bipolar transistors, power MOSFETs, and insulated gate bipolar transistors (IGBT) in zero-voltage and zero-current switching conditions. It is shown that these devices exhibit distinct switching characteristics during turn-off under various switching conditions
Keywords :
insulated gate bipolar transistors; power MOSFET; power bipolar transistors; power convertors; power semiconductor switches; semiconductor device measurement; semiconductor device models; semiconductor device testing; switching circuits; 2-D simulations; measurements; power IGBTs; power MOSFETs; power bipolar transistors; soft-switching power converter technologies; switching dynamics; switching performance; turn-off switching characteristics; zero-current switching; zero-voltage switching; Circuit testing; Circuit topology; Insulated gate bipolar transistors; MOSFETs; Motor drives; Power electronics; Power semiconductor switches; Resonance; Switching converters; Voltage;
Conference_Titel :
Power Modulator Symposium, 1998. Conference Record of the 1998 Twenty-Third International
Conference_Location :
Rancho Mirage, CA
Print_ISBN :
0-7803-4244-5
DOI :
10.1109/MODSYM.1998.741207
