Title :
A fully-integrated 60 GHz VCO in l3Onm SOI-CMOS on high-resistivity substrate
Author :
Payet, Benoit ; Vincent, Pierre ; Connor, Ian O. ; Gaffiot, Frédéric
Author_Institution :
CEA-LETI, Grenoble
Abstract :
The design and the optimization of a new VCO operating at 60GHz is detailed. This key block in millimeter-wave transceivers takes advantage of a promising CMOS PD-SOI technology on a high-resistivity substrate (rho>1000Omegacm). As a result, an innovative architecture has been chosen to overcome difficulties encountered in the classical LC tank structure. One of the major issues in microwave networks is the interconnections. CPW has been chosen and thoroughly optimized: model parameters are extracted from a quasi-3D electromagnetic simulator. Simulation results and conclusions drawn here are to be verified with upcoming chip measurement
Keywords :
CMOS integrated circuits; integrated circuit design; millimetre wave oscillators; silicon-on-insulator; transceivers; voltage-controlled oscillators; 130 nm; 60 GHz; CMOS PD-SOI technology; classical LC tank structure; coplanar waveguide; high-resistivity substrate; microwave networks; millimeter-wave transceivers; quasi3D electromagnetic simulator; voltage controlled oscillator; CMOS technology; Coplanar waveguides; Design optimization; Electromagnetic measurements; Electromagnetic modeling; Millimeter wave technology; Semiconductor device measurement; Semiconductor device modeling; Transceivers; Voltage-controlled oscillators;
Conference_Titel :
Research in Microelectronics and Electronics 2006, Ph. D.
Conference_Location :
Otranto
Print_ISBN :
1-4244-0157-7
DOI :
10.1109/RME.2006.1689907
