A fully-integrated 60 GHz VCO in l3Onm SOI-CMOS on high-resistivity substrate

Author

Payet, Benoit ; Vincent, Pierre ; Connor, Ian O. ; Gaffiot, Frédéric

Author_Institution

CEA-LETI, Grenoble

fYear

0

fDate

0-0 0

Firstpage

105

Lastpage

108

Abstract

The design and the optimization of a new VCO operating at 60GHz is detailed. This key block in millimeter-wave transceivers takes advantage of a promising CMOS PD-SOI technology on a high-resistivity substrate (rho>1000Omegacm). As a result, an innovative architecture has been chosen to overcome difficulties encountered in the classical LC tank structure. One of the major issues in microwave networks is the interconnections. CPW has been chosen and thoroughly optimized: model parameters are extracted from a quasi-3D electromagnetic simulator. Simulation results and conclusions drawn here are to be verified with upcoming chip measurement

Keywords

CMOS integrated circuits; integrated circuit design; millimetre wave oscillators; silicon-on-insulator; transceivers; voltage-controlled oscillators; 130 nm; 60 GHz; CMOS PD-SOI technology; classical LC tank structure; coplanar waveguide; high-resistivity substrate; microwave networks; millimeter-wave transceivers; quasi3D electromagnetic simulator; voltage controlled oscillator; CMOS technology; Coplanar waveguides; Design optimization; Electromagnetic measurements; Electromagnetic modeling; Millimeter wave technology; Semiconductor device measurement; Semiconductor device modeling; Transceivers; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Research in Microelectronics and Electronics 2006, Ph. D.

Conference_Location

Otranto

Print_ISBN

1-4244-0157-7

Type

conf

DOI

10.1109/RME.2006.1689907

Filename

1689907