Sub-microsecond pulse switching characteristics of a 4500-V IEGT

Author

Okamura, K. ; Nakajima, N. ; Souda, M. ; Endo, F. ; Matsuda, H. ; Kaneko, E.

Author_Institution

Toshiba Corp., Tokyo, Japan

fYear

1998

fDate

22-25 Jun 1998

Firstpage

123

Lastpage

126

Abstract

The short pulse (pulse width <=1 μs) switching characteristics of a newly developed semiconductor switch device, the 4500 V IEGT, have been investigated. Test results show that switching efficiency for pulse widths of 200 ns, 500 ns and 1000 ns were 65%, 80%, and 90%, respectively. Furthermore, the short recovery time of less than 20 μs showed that the IEGT is adequate for high repetition rate applications. It is concluded that the IEGT is one of the most promising devices for pulsed power uses

Keywords

power bipolar transistors; power semiconductor switches; pulsed power switches; semiconductor device measurement; semiconductor device testing; 4500 V; IEGT semiconductor pulsed power switch; injection enhanced gate transistor; recovery time; repetition rate; short pulse switching characteristics; sub-μs pulse switching characteristics; switching efficiency; Circuit testing; Engineering profession; Insulated gate bipolar transistors; Space vector pulse width modulation; Switches; Switching circuits; Switching loss; Temperature; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Modulator Symposium, 1998. Conference Record of the 1998 Twenty-Third International

Conference_Location

Rancho Mirage, CA

ISSN

1076-8467

Print_ISBN

0-7803-4244-5

Type

conf

DOI

10.1109/MODSYM.1998.741208

Filename

741208