Versatile high voltage solid state MOSFET modulators for driving RF sources

This paper describes the development and methods used, for a range of series coupled high voltage MOSFET modulators for driving RF devices or systems that traditionally would have used pulse transformers. A description of the concepts used in these modulators, which are based around 1 kV MOSFET switch modules with a range of peak current capabilities, are given. Modules based upon avalanche FETs have also been developed, which provide very rugged performance under extremely harsh fault conditions. Assemblies working at up to 30 kV, both single ended and push-pull have been produced with these modules