Versatile high voltage solid state MOSFET modulators for driving RF sources

Author

Richardson, Bob ; Rush, Ray ; Iskander, Mark ; Gooch, Paul ; Deal, Keith

Author_Institution

EEV Ltd., Witham, UK

fYear

1998

fDate

22-25 Jun 1998

Firstpage

164

Lastpage

167

Abstract

This paper describes the development and methods used, for a range of series coupled high voltage MOSFET modulators for driving RF devices or systems that traditionally would have used pulse transformers. A description of the concepts used in these modulators, which are based around 1 kV MOSFET switch modules with a range of peak current capabilities, are given. Modules based upon avalanche FETs have also been developed, which provide very rugged performance under extremely harsh fault conditions. Assemblies working at up to 30 kV, both single ended and push-pull have been produced with these modules

Keywords

field effect transistor switches; magnetrons; power MOSFET; pulsed power supplies; pulsed power switches; travelling wave tubes; 1 kV; MOSFET switch modules; RF sources driving; avalanche FET; harsh fault conditions; high voltage solid state MOSFET modulators; magnetrons; peak current capabilities; push-pull assemblies; series coupled high voltage MOSFET modulators; single ended assemblies; travelling wave tubes; Capacitance; Capacitors; FETs; MOSFET circuits; Power semiconductor switches; Pulse modulation; Pulse transformers; Radio frequency; Solid state circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Modulator Symposium, 1998. Conference Record of the 1998 Twenty-Third International

Conference_Location

Rancho Mirage, CA

ISSN

1076-8467

Print_ISBN

0-7803-4244-5

Type

conf

DOI

10.1109/MODSYM.1998.741217

Filename

741217