• DocumentCode
    2491770
  • Title

    Design of a 100 kV, 200 ampere, 2 kilohertz single “Hobetron” tube modulator for industrial plasma source ion implantation applications

  • Author

    Reass, W. ; Munson, C. ; Malaczynski, G. ; Mantese, J. ; True, R. ; Deb, D. ; Hansen, R.

  • Author_Institution
    Los Alamos Nat. Lab., NM, USA
  • fYear
    1998
  • fDate
    22-25 Jun 1998
  • Firstpage
    194
  • Lastpage
    197
  • Abstract
    This paper presents an advanced plasma source ion implantation (PSII) modulator system which takes advantage of a novel high power electron beam switch tube called the “Hobetron” (derived from hollow electron beam). The authors describe this tube and outline features which render it so well-suited for use in PSII modulators. The Hobetron has been developed from similar beam switch tubes of proven reliability, and when coupled with an evolutionary modulator design, should provide a system of long life and reliable operation
  • Keywords
    electron tubes; ion implantation; modulators; plasma materials processing; pulsed power supplies; pulsed power switches; reliability; 100 kV; 2 kHz; 200 A; Hobetron tube modulator design; evolutionary modulator design; high power electron beam switch tube; hollow electron beam; industrial plasma source ion implantation applications; life; pulsed power supply switches; reliability; reliable operation; Electron beams; Implants; Ion implantation; Optical modulation; Plasma applications; Plasma immersion ion implantation; Plasma sources; Switches; Thyratrons; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Modulator Symposium, 1998. Conference Record of the 1998 Twenty-Third International
  • Conference_Location
    Rancho Mirage, CA
  • ISSN
    1076-8467
  • Print_ISBN
    0-7803-4244-5
  • Type

    conf

  • DOI
    10.1109/MODSYM.1998.741225
  • Filename
    741225