DocumentCode :
2491770
Title :
Design of a 100 kV, 200 ampere, 2 kilohertz single “Hobetron” tube modulator for industrial plasma source ion implantation applications
Author :
Reass, W. ; Munson, C. ; Malaczynski, G. ; Mantese, J. ; True, R. ; Deb, D. ; Hansen, R.
Author_Institution :
Los Alamos Nat. Lab., NM, USA
fYear :
1998
fDate :
22-25 Jun 1998
Firstpage :
194
Lastpage :
197
Abstract :
This paper presents an advanced plasma source ion implantation (PSII) modulator system which takes advantage of a novel high power electron beam switch tube called the “Hobetron” (derived from hollow electron beam). The authors describe this tube and outline features which render it so well-suited for use in PSII modulators. The Hobetron has been developed from similar beam switch tubes of proven reliability, and when coupled with an evolutionary modulator design, should provide a system of long life and reliable operation
Keywords :
electron tubes; ion implantation; modulators; plasma materials processing; pulsed power supplies; pulsed power switches; reliability; 100 kV; 2 kHz; 200 A; Hobetron tube modulator design; evolutionary modulator design; high power electron beam switch tube; hollow electron beam; industrial plasma source ion implantation applications; life; pulsed power supply switches; reliability; reliable operation; Electron beams; Implants; Ion implantation; Optical modulation; Plasma applications; Plasma immersion ion implantation; Plasma sources; Switches; Thyratrons; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Modulator Symposium, 1998. Conference Record of the 1998 Twenty-Third International
Conference_Location :
Rancho Mirage, CA
ISSN :
1076-8467
Print_ISBN :
0-7803-4244-5
Type :
conf
DOI :
10.1109/MODSYM.1998.741225
Filename :
741225
Link To Document :
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