Title :
Direct Tunneling Gate Current in Strained-Si/SiGe Metal-Oxide-Semiconductor Structures
Author :
Zainuddin, A.N.M. ; Haque, A.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka
Abstract :
Direct tunneling (DT) gate current of deep submicron strained-Si (SS) on relaxed Si1-xGex metal-oxide-semiconductor (MOS) structures is calculated under inversion bias for both n and p type substrates. Comparison of DT current between strained and unstrained devices has also been made under matched threshold voltage condition. It has been found that strain induced changes in DT current more complex in SS-pMOS devices than in SS-nMOS devices due to the inclusion of the bowing effect in the SS bandgap
Keywords :
Ge-Si alloys; MIS structures; silicon; MOS structures; Si-SiGe; direct tunneling gate current; inversion bias; metal oxide semiconductor structures; n type substrate; p type substrate; Boundary conditions; Capacitive sensors; Germanium silicon alloys; Green´s function methods; Photonic band gap; Poisson equations; Silicon germanium; Threshold voltage; Tunneling; Wave functions;
Conference_Titel :
Electrical and Computer Engineering, 2006. ICECE '06. International Conference on
Conference_Location :
Dhaka
Print_ISBN :
98432-3814-1
DOI :
10.1109/ICECE.2006.355678
