• DocumentCode
    2491933
  • Title

    Direct Tunneling Gate Current in Strained-Si/SiGe Metal-Oxide-Semiconductor Structures

  • Author

    Zainuddin, A.N.M. ; Haque, A.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka
  • fYear
    2006
  • fDate
    19-21 Dec. 2006
  • Firstpage
    501
  • Lastpage
    504
  • Abstract
    Direct tunneling (DT) gate current of deep submicron strained-Si (SS) on relaxed Si1-xGex metal-oxide-semiconductor (MOS) structures is calculated under inversion bias for both n and p type substrates. Comparison of DT current between strained and unstrained devices has also been made under matched threshold voltage condition. It has been found that strain induced changes in DT current more complex in SS-pMOS devices than in SS-nMOS devices due to the inclusion of the bowing effect in the SS bandgap
  • Keywords
    Ge-Si alloys; MIS structures; silicon; MOS structures; Si-SiGe; direct tunneling gate current; inversion bias; metal oxide semiconductor structures; n type substrate; p type substrate; Boundary conditions; Capacitive sensors; Germanium silicon alloys; Green´s function methods; Photonic band gap; Poisson equations; Silicon germanium; Threshold voltage; Tunneling; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Computer Engineering, 2006. ICECE '06. International Conference on
  • Conference_Location
    Dhaka
  • Print_ISBN
    98432-3814-1
  • Type

    conf

  • DOI
    10.1109/ICECE.2006.355678
  • Filename
    4178514
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2491933