Revised Physical Alpha-Power Law Model for Ultrathin Oxide MOSFETs

Author

Arefin, Nazmul ; Ahmed, Fauzia ; Rahman, Md Rashedur ; Khosru, Quazi Deen Mohd

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka

fYear

2006

fDate

19-21 Dec. 2006

Firstpage

514

Lastpage

517

Abstract

A thorough study of the physical alpha-power law MOSFET model reveals that the model has been developed for relatively thick oxide MOSFETs ignoring the effect of interface states. Although the effect of interface states is negligible for thicker oxide MOSFETs, it starts affecting the drive current as the device size is scaled down to ultrathin regime. In this work, we propose a revised physical alpha-power law model for ultrathin oxide MOSFETs incorporating the effect of interface states. A comparative study between the existing and the proposed model revealed a remarkable significance of interface states on the characteristics of ultrathin oxide MOSFETs.

Keywords

MOSFET; interface states; semiconductor device models; interface states; revised physical alpha-power law model; ultrathin oxide MOSFETs; Capacitance; Computer interfaces; Degradation; Differential equations; Electronic mail; Interface states; MOSFETs; Mathematical model; Physics computing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2006. ICECE '06. International Conference on

Conference_Location

Dhaka

Print_ISBN

98432-3814-1

Type

conf

DOI

10.1109/ICECE.2006.355681

Filename

4178517