Title :
Revised Physical Alpha-Power Law Model for Ultrathin Oxide MOSFETs
Author :
Arefin, Nazmul ; Ahmed, Fauzia ; Rahman, Md Rashedur ; Khosru, Quazi Deen Mohd
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka
Abstract :
A thorough study of the physical alpha-power law MOSFET model reveals that the model has been developed for relatively thick oxide MOSFETs ignoring the effect of interface states. Although the effect of interface states is negligible for thicker oxide MOSFETs, it starts affecting the drive current as the device size is scaled down to ultrathin regime. In this work, we propose a revised physical alpha-power law model for ultrathin oxide MOSFETs incorporating the effect of interface states. A comparative study between the existing and the proposed model revealed a remarkable significance of interface states on the characteristics of ultrathin oxide MOSFETs.
Keywords :
MOSFET; interface states; semiconductor device models; interface states; revised physical alpha-power law model; ultrathin oxide MOSFETs; Capacitance; Computer interfaces; Degradation; Differential equations; Electronic mail; Interface states; MOSFETs; Mathematical model; Physics computing; Voltage;
Conference_Titel :
Electrical and Computer Engineering, 2006. ICECE '06. International Conference on
Conference_Location :
Dhaka
Print_ISBN :
98432-3814-1
DOI :
10.1109/ICECE.2006.355681
