DocumentCode
2492371
Title
The influence of via hole inductance on millimetre-wave mixer performance
Author
Brabetz, T. ; Fusco, V.F.
Author_Institution
Dept. of Electr. & Electron. Eng., Queen´´s Univ., Belfast, UK
fYear
2000
fDate
2000
Firstpage
40
Lastpage
44
Abstract
A novel method to eliminate the negative influence of the parasitic inductance of via holes on mixer performance is presented. The via hole inductance is resonated with an open stub for the millimetre-wave frequencies of the circuit. Detailed simulations of a pHEMT GaAs MMIC gate mixer predict a 2 dB higher conversion gain, and 4 dB reduction in LO power requirements for a circuit with resonated via holes in comparison to one with the classic form of via holes
Keywords
HEMT integrated circuits; field effect MIMIC; inductance; millimetre wave mixers; resonance; EHF; GaAs; MM-wave mixer performance; PHEMT GaAs MIMIC gate mixer; millimetre-wave mixer performance; open stub; parasitic inductance; resonated via holes; via hole inductance; Circuit simulation; Gallium arsenide; HEMTs; Inductance; MMICs; PHEMTs; Parasitic capacitance; Performance gain; Predictive models; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
High Frequency Postgraduate Student Colloquium, 2000
Conference_Location
Dublin
Print_ISBN
0-7803-6590-9
Type
conf
DOI
10.1109/HFPSC.2000.874080
Filename
874080
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