Title :
An improved selective area growth method in fabrication of electroabsorption modulated laser
Author :
Wang, Huan ; Zhu, Hongliang ; Cheng, Yuanbing ; Chen, Dingbo ; Zhang, Wei ; Wang, Liesong ; Zhang, Yunxiao ; Sun, Yu ; Wang, Wei
Author_Institution :
CAS, Beijing
Abstract :
An improved selective area growth (SAG) method is proposed to better the fabrication and performance of the Electroabsorption modulated laser. The typical threshold current of the EML is 18 mA, and the output power is 5.6 mW at EAM facet.
Keywords :
MOCVD; distributed feedback lasers; electroabsorption; optical modulation; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; DFB laser; current 18 mA; electroabsorption modulated laser; laser fabrication; metal-organic vapor phase epitaxy; power 5.6 mW; selective area growth; semiconductor laser; Absorption; Bragg gratings; Chirp modulation; Contacts; Content addressable storage; Indium phosphide; Laboratories; Optical device fabrication; Optical modulation; Semiconductor lasers;
Conference_Titel :
Optical Fiber Communication and Optoelectronics Conference, 2007 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-0-9789217-2-9
Electronic_ISBN :
978-0-9789217-2-9
DOI :
10.1109/AOE.2007.4410851
