Title :
Regular oscillation in two-section laser structures based on δ-doped superlattices
Author :
Ushakov, D.V. ; Kononenko, V.K. ; Manak, I.S.
Author_Institution :
Belarussian State Univ., Minsk, Russia
Abstract :
It is theoretically shown that in two-section laser structures based on δ-doped superlattices a broadened spectral tuning is realised under special requirements for the parameters and excitation conditions in the gain and absorbing sections. The tuning occurs in the stationary operation, during transient process, and regular pulsation regime as well. In the GaAs δ-doped superlattice lasers, the tuning range covers of up to 60 nm in near infra-red
Keywords :
III-V semiconductors; gallium arsenide; laser theory; laser tuning; semiconductor device models; semiconductor doping; semiconductor lasers; semiconductor superlattices; spectral line broadening; δ-doped superlattices; GaAs; GaAs δ-doped superlattice laser; IR tuning range; absorbing section; broadened spectral tuning; excitation conditions; gain section; regular oscillation; regular pulsation regime; stationary operation; transient process; two-section laser structure; two-section laser structures; Charge carrier processes; Doping profiles; Laser excitation; Laser modes; Laser tuning; Optical pulses; Oscillators; Photonic band gap; Radiative recombination; Superlattices;
Conference_Titel :
Transparent Optical Networks, 2000 2nd International Conference on
Conference_Location :
Gdansk
Print_ISBN :
0-7803-6337-X
DOI :
10.1109/ICTON.2000.874110
