DocumentCode :
2492932
Title :
The annealing process of R.F. magnetron sputtered ZnO:Al films
Author :
Yu Zhinong ; Xu Jin ; Xue Wei ; Li Jinwei
Author_Institution :
Beijing Inst. of Technol., Beijing
fYear :
2007
fDate :
17-19 Oct. 2007
Firstpage :
552
Lastpage :
554
Abstract :
The ZnO:AI films were annealed at different atmosphere. The films annealed in vacuum showed perfect properties, compared with in air and Ar atmosphere, and the low resistivity of the order of 10-3 Omegaldrcm was obtained in the condition of vacuum annealing at 220degC.
Keywords :
II-VI semiconductors; aluminium; annealing; electrical resistivity; semiconductor thin films; sputtered coatings; wide band gap semiconductors; zinc compounds; RF magnetron sputtered films; ZnO:Al; film resistivity; temperature 220 degC; transparent conducting oxides; vacuum annealing; wide-band-gap semiconductors; Annealing; Argon; Atmosphere; Conductive films; Conductivity; Doping; Indium tin oxide; Optical films; Substrates; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication and Optoelectronics Conference, 2007 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-0-9789217-2-9
Electronic_ISBN :
978-0-9789217-2-9
Type :
conf
DOI :
10.1109/AOE.2007.4410872
Filename :
4410872
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2492932
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