Title :
X-band power amplifier for active phased-array antennas
Author :
Abolduyev, I.M. ; Zubkov, A.M. ; Minnebaev, V.M.
Author_Institution :
SRI "Pulsar", Moscow, Russia
Abstract :
An amplifier is designed with P1 dB>2 W and gain >30 dB in the frequency band of 8.1±0.25 GHz. The gain variation is less than 1 dB, with controlled phase from 0° to 360°, and efficiency of more than 20%. As an active element base we use crystals of the transistors AΠ608 and AΠ603, produced by the Pulsar plant
Keywords :
active antenna arrays; antenna phased arrays; microwave antenna arrays; microwave power amplifiers; 7.85 to 8.35 GHz; X-band power amplifier; active phased-array antennas; Couplers; Detectors; FETs; Frequency; Gain; Gallium arsenide; Microwave integrated circuits; Power amplifiers; Power generation; Voltage;
Conference_Titel :
Satellite Communications, 1998. ICSC '98. The Third International Conference on
Conference_Location :
Moscow
Print_ISBN :
5-93184-002-8
DOI :
10.1109/ICSC.1998.741405
