Title :
Optically controlling photonic band gap logic elements
Author :
Nefedov, Igor ; Morozov, Yurii ; Gusyatnikov, Viktor ; Zheltikov, Aleksei
Author_Institution :
Inst. of Radio Eng. & Electron., Acad. of Sci., Saratov, Russia
Abstract :
The change in the refractive index of GaAs due to the light-induced generation of nonequilibrium charge carriers is shown to substantially change the transmission of a one-dimensional GaAs/GaAlAs photonic band-gap structure, allowing low-threshold photonic-crystal optical logic gates to be created. Elementary logic operations of the Boolean algebra performed with nonlinear PBG structures, including the biconditional implication, module-two addition, Peirce´s arrow, and disjunction, are demonstrated. We show how different logic operations can be performed with the same GaAs/GaAlAs PBG structure at different power densities of logic pulses
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical logic; photonic band gap; refractive index; Boolean algebra; GaAs-GaAlAs; GaAs/GaAlAs one-dimensional photonic band gap structure; nonequilibrium charge carrier generation; nonlinear structure; optical logic gate; refractive index; Charge carriers; Gallium arsenide; Logic functions; Logic gates; Nonlinear optics; Optical control; Optical refraction; Optical variables control; Photonic band gap; Refractive index;
Conference_Titel :
Transparent Optical Networks, 2000 2nd International Conference on
Conference_Location :
Gdansk
Print_ISBN :
0-7803-6337-X
DOI :
10.1109/ICTON.2000.874152