DocumentCode
2493766
Title
Simulation of an optical gain of quantum well lasers taking into account the optical gain and electron density nonlinearities
Author
Lysak, Vladimir V. ; Sukhoivanov, Igor A.
Author_Institution
Lab. Photonics, Kharkov State Univ. of Radio Electron., Ukraine
fYear
2000
fDate
2000
Firstpage
225
Lastpage
228
Abstract
The influence of electron concentration on optical gain of semiconductor lasers is analysed. The comparison by integrated gain model and approached models for a range of active layer thickness change from 50 up to 1000 Å was carried out. The expression of the approximation model parameters change from the active layer thickness is determined
Keywords
electron density; laser theory; quantum well lasers; computer simulation; electron density; nonlinearity; optical gain; quantum well laser; Electron optics; Fiber nonlinear optics; Laser modes; Nonlinear optics; Optical refraction; Optical saturation; Optical variables control; Quantum well lasers; Semiconductor lasers; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Transparent Optical Networks, 2000 2nd International Conference on
Conference_Location
Gdansk
Print_ISBN
0-7803-6337-X
Type
conf
DOI
10.1109/ICTON.2000.874161
Filename
874161
Link To Document