Title :
A wavelet-based technique to decrease full-wave simulation time of microwave/mm-wave transistors
Author :
Movahhedi, Masoud ; Abdipour, Abdolali
Author_Institution :
Dept. of Electr. Eng., Amirkabir Univ. of Technol., Tehran, Iran
Abstract :
A new wavelet-based simulation approach for the analysis and simulation of microwave/mm-wave transistors is presented. For the first time in the literature, the Daubechies-based wavelet approach is applied to semiconductor equations to generate a nonuniform mesh. This allows the forming of fine and coarse grids in locations where variable solutions change rapidly and slowly, respectively. The procedure of nonuniform mesh generation is described in detail by simulating a MESFET. It is shown that good accuracy can be achieved while compressing the number of unknowns by 70%.
Keywords :
Schottky gate field effect transistors; mesh generation; microwave transistors; millimetre wave transistors; simulation; wavelet transforms; Daubechies-based wavelet approach; MESFET; coarse grids; fine grids; full-wave simulation time; microwave transistors; mm-wave transistors; nonuniform mesh generation; semiconductor equations; wavelet-based technique; Analytical models; Circuit simulation; Equations; Finite difference methods; Mesh generation; Microwave devices; Microwave technology; Microwave theory and techniques; Microwave transistors; Wavelet analysis;
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
DOI :
10.1109/CRMICO.2004.183144
