Title :
High electron mobility transistor small signal model
Author :
Yemtsev, P.A. ; Sunduchkov, I.K. ; Sunduchkov, K.S. ; Shelkovnikov, B.N.
Abstract :
The small signal model of the ATF-36077 high electron mobility transistor is presented for both packaged and unpackaged cases. The model parameter extraction procedure is presented. It is shown that using the transistor without its package gives the possibility to expand the amplifier frequency range more than twice.
Keywords :
S-parameters; amplifiers; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device packaging; ATF-36077 HEMT; ATF-36077 high electron mobility transistor; S-parameters; microwave transistor; transistor small signal model; HEMTs; Helium; IEEE catalog; MODFETs; Organizing; Rail to rail outputs; Roentgenium; Scattering parameters; Telecommunications; User-generated content;
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
DOI :
10.1109/CRMICO.2004.183145
