Title :
An experimental extraction of low noise field effect transistor´s linear equivalent circuit and noise model
Author :
Krutov, A.V. ; Rebrov, A.S.
Author_Institution :
FSUC RPC "Istok", Fryazino, Russia
Abstract :
An experimental extraction of a low noise field effect transistor\´s linear equivalent circuit and noise model is presented. The linear equivalent circuits and noise models are extracted for two types of FET (3P374A-5 manufactured by joint-stock company "Planet-GaAs", "Sozvezdiye-P" manufactured by FSUC RPC "Istok") and two types PHEMT manufactured by FSUC RPC "Istok" (molecular beam epitaxy structure and metalorganic vapor phase epitaxy structure).
Keywords :
equivalent circuits; field effect transistors; power HEMT; semiconductor device models; semiconductor device noise; PHEMT; linear equivalent circuit; low noise FET; low noise field effect transistor; metalorganic vapor phase epitaxy structure; molecular beam epitaxy structure; noise model; power HEMT; Circuit noise; Equivalent circuits; Frequency; Gallium arsenide; IEEE catalog; Manufacturing; Microwave FETs; Organizing; PHEMTs; Telecommunications;
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
DOI :
10.1109/CRMICO.2004.183146
