DocumentCode
2493854
Title
GaN Heterodimensional Schottky Diode for THz Detection
Author
Veksler, D. ; Aniel, F. ; Rumyantsev, S. ; Shur, M.S. ; Pala, N. ; Hu, X. ; Fareed, R.S.Q. ; Gaska, R.
Author_Institution
Rensselaer Polytech. Inst., Troy
fYear
2006
fDate
22-25 Oct. 2006
Firstpage
323
Lastpage
326
Abstract
The performance of conventional Schottky diodes used for detecting THz radiation is limited by the RC product. Heterodimensional diodes have a smaller capacitance and series resistance. In this paper, we present the first experimental demonstration of THz detection by AlGaN/GaN heterodimensional Schottky diodes (HDSD) that exhibited reasonable performance up to at least 2.24 THz.
Keywords
III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; semiconductor heterojunctions; submillimetre wave detectors; GaN; THz detection; frequency 2.24 THz; heterodimensional Schottky diode; Aluminum gallium nitride; Capacitance; Cutoff frequency; Gallium nitride; Immune system; Indium gallium arsenide; Radiation detectors; Schottky barriers; Schottky diodes; USA Councils;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2006. 5th IEEE Conference on
Conference_Location
Daegu
ISSN
1930-0395
Print_ISBN
1-4244-0375-8
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2007.355471
Filename
4178623
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