Title :
High-speed InGaP/AlGaAs/InGaAs HBTs
Author :
Kobayashi, S. ; Yakihara, T. ; Fujita, T. ; Oka, S. ; Miura, A.
Author_Institution :
Teratec Corp., Yokogawa Electr. Corp., Musashino, Japan
Abstract :
We have fabricated high-speed InGaP/AlGaAs/InGaAs graded-base hetero-bipolar transistors (HBTs), using Mg as the base-region p-type dopant. We have obtained maximum Mg doping concentration for GaAs of 1.2×1020/cm3. In addition, the dead region under the base metal contact layer has been etched away. With the HBT´s emitter width as 1.0 um, we obtained excellent frequency characteristics of the short-circuit current-gain frequency ft and the maximum frequency of oscillation fmax as high as approximately 130 GHz and 230 GHz, respectively. We obtained maximum toggle frequency of 22.5 GHz for a static frequency divider by using the 4-inch full process of the InGaP/AlGaAs/InGaAs graded-base HBT
Keywords :
III-V semiconductors; MMIC frequency convertors; aluminium compounds; bipolar MMIC; emitter-coupled logic; frequency dividers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor doping; 1 mum; 130 GHz; 22.5 GHz; 230 GHz; 4 in; ECL ring oscillator; GaAs:Mg; HBT emitter width; InGaP-AlGaAs-InGaAs; InGaP/AlGaAs/InGaAs graded-base HBT; Mg doping concentration; base metal contact layer; base-region p-type dopant; dead region; frequency characteristics; high-speed InGaP/AlGaAs/InGaAs HBTs; maximum frequency of oscillation; maximum toggle frequency; short-circuit current-gain frequency; static frequency divider; Doping; Etching; Fabrication; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Parasitic capacitance; Prototypes; Solid state circuits;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668495
