Title :
ESD sensitivity study of various diode protection circuits implemented in a production 1 μm GaAs HBT technology
Author :
Yamada, F.M. ; Oki, A.K. ; Kaneshiro, E.N. ; Lammert, M.D. ; Gutierrez-Aitken, A.L. ; Hyde, J.D.
Author_Institution :
Electron. Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
Advanced GaAs Heterojunction Bipolar Transistors (HBTs) featuring smaller junction areas have an increased susceptibility to damage from Electrostatic Discharge (ESD) events and this is a topic of concern. In this paper, we examined the ESD sensitivity of various on-chip ESD-protection networks designed using base-collector (BC) junction diodes and Schottky diodes from a production 1 μm GaAs/AIGaAs HBT process. The purpose of this work was to measure and evaluate the ESD sensitivity of various protection networks and determine their effectiveness as protection devices
Keywords :
III-V semiconductors; Schottky diodes; electrostatic discharge; gallium arsenide; heterojunction bipolar transistors; protection; semiconductor diodes; 1 micron; GaAs; GaAs heterojunction bipolar transistor; Schottky diode; base-collector junction diode; electrostatic discharge; protection circuit; Biological system modeling; Circuit testing; Electrostatic discharge; Gallium arsenide; Heterojunction bipolar transistors; Partial discharges; Production; Protection; Schottky diodes; Space technology;
Conference_Titel :
GaAs Reliability Workshop, 1999. Proceedings
Conference_Location :
Monterey, CA
Print_ISBN :
0-7908-0100-0
DOI :
10.1109/GAASRW.1999.874179
