DocumentCode
2494195
Title
A Wide Dynamic Range CMOS Image Sensor with Gated Charge Storage and a Multiple Sampling Technique
Author
Shafie, Suhaidi ; Kawahito, S.
Author_Institution
Shizuoka Univ., Hamamatsu
fYear
2006
fDate
22-25 Oct. 2006
Firstpage
404
Lastpage
407
Abstract
A wide dynamic range CMOS image sensor which has a photodiode and a gated storage diode in each pixel is proposed. The storage diode outputs with short accumulation time are read out for multiple times, and the photodiode output and the multiple-sampled storage diode outputs are synthesized in an external system. A separation gate is used to control the charge flow to the storage diode. The proposed technique allows very wide dynamic range imaging with less motion artifact. The operation of the proposed pixel device structure is simulated and an experimental CMOS image sensor is implemented in 0.18 mum CMOS image sensor technology.
Keywords
CMOS image sensors; charge storage diodes; photodiodes; CMOS image sensor; dynamic range imaging; external system; gated charge storage; multiple sampling technique; photodiode; size 0.18 mum; wide dynamic range; CMOS image sensors; CMOS technology; Capacitors; Diodes; Dynamic range; Image sampling; Image sensors; Image storage; Photodiodes; Pixel;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2006. 5th IEEE Conference on
Conference_Location
Daegu
ISSN
1930-0395
Print_ISBN
1-4244-0375-8
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2007.355491
Filename
4178643
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