DocumentCode :
2494399
Title :
A terahertz oscillator based on GaN-HFET with integrated antenna for frequency mixing and rectification
Author :
Gaspare, A. Di ; Ortolani, M. ; Casini, R. ; Foglietti, V. ; Giliberti, V. ; Giovine, E. ; Evangelisti, F. ; Sadofev, S. ; Calarco, R.
Author_Institution :
IFN (Inst. for Photonics & Nanotechnol.), Rome, Italy
fYear :
2012
fDate :
23-28 Sept. 2012
Firstpage :
1
Lastpage :
3
Abstract :
We fabricated in-house Field Effect Transistors detectors on GaN-heterostructures where we integrated on-chip broadband antennas for rectification of THz current oscillations in the high mobility two-dimensional electron gas.
Keywords :
III-V semiconductors; antennas; broadband antennas; carrier mobility; gallium compounds; high electron mobility transistors; rectification; submillimetre wave oscillators; terahertz wave detectors; two-dimensional electron gas; wide band gap semiconductors; HFET; THz current oscillations; frequency mixing; high mobility two-dimensional electron gas; in-house field effect transistors detector; integrated antenna; on-chip broadband antenna; rectification; terahertz oscillator; Antennas; Logic gates; MODFETs; Mixers; Oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
ISSN :
2162-2027
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
Type :
conf
DOI :
10.1109/IRMMW-THz.2012.6379487
Filename :
6379487
Link To Document :
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