• DocumentCode
    2494413
  • Title

    Asymmetric double grating gate detector fabricated on industrial pseudomorphic AlGaAs/InGaAs/AlGaAs heterostructure

  • Author

    Gaspare, A. Di ; Casini, R. ; Diakonova, N. ; Drexler, C. ; Giliberti, V. ; Ortolani, M. ; Coquillat, D. ; Knap, W. ; Ganichev, S.D.

  • Author_Institution
    Inst. for Photonics & Nanotechnol., Sapienza Univ., Rome, Italy
  • fYear
    2012
  • fDate
    23-28 Sept. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Rectification at room temperature by asymmetric double-grating-gate GaAs-based field effect transistors has been observed up to 3.89 THz at zero drain bias, and attributed to the peculiar unequal spacing among the two gratings.
  • Keywords
    III-V semiconductors; aluminium compounds; diffraction gratings; gallium arsenide; high electron mobility transistors; indium compounds; rectification; terahertz wave detectors; AlGaAs-InGaAs-AlGaAs; asymmetric double grating gate detector; asymmetric double-grating-gate field effect transistors; frequency 3.89 THz; industrial pseudomorphic heterostructure; peculiar unequal spacing; room temperature rectification; temperature 293 K to 298 K; zero drain bias; Fingers; Gratings; HEMTs; Logic gates; MODFETs; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
  • Conference_Location
    Wollongong, NSW
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4673-1598-2
  • Electronic_ISBN
    2162-2027
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2012.6379488
  • Filename
    6379488
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2494413