Title :
All-electronic terahertz imaging: Planar emitters and detectors at 220 GHz in CMOS technology
Author :
Lisauskas, A. ; Khamaisi, B. ; Boppel, S. ; Mundt, M. ; Krozer, V. ; Socher, E. ; Roskos, H.G.
Author_Institution :
Phys. Inst., Johann Wolfgang Goethe-Univ. Frankfurt, Frankfurt am Main, Germany
Abstract :
We present an all-electronic raster-scan imaging system for 220 GHz which is fully based on planar CMOS integrated circuit components. The emitter has been implemented in 90-nm CMOS process and delivers up to 50 μW at 220 GHz. The detector, based on a patch-antenna-coupled field-effect transistor pair has been implemented in a 150-nm CMOS process and exhibits a maximum responsivity of 180 V/W at 213 GHz and a bandwidth of 5% at FWHM. Our preliminary imaging results achieve an SNR of 20 dB at the equivalent noise bandwidth of 5 Hz.
Keywords :
CMOS integrated circuits; field effect MIMIC; microstrip antennas; millimetre wave antennas; millimetre wave detectors; millimetre wave field effect transistors; millimetre wave imaging; terahertz wave imaging; CMOS process; CMOS technology; FWHM; all-electronic raster-scan imaging system; all-electronic terahertz imaging; bandwidth 5 Hz; detectors; frequency 213 GHz; frequency 220 GHz; patch-antenna-coupled field-effect transistor; planar CMOS integrated circuit components; planar emitters; size 150 nm; size 90 nm; CMOS integrated circuits; CMOS technology; Imaging; Performance evaluation;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6379497
