DocumentCode
2494695
Title
Terahertz photoluminescence from GaN(Si) epitaxial layers under continuous-wave interband excitation
Author
Andrianov, V. ; Zakhar´in, A.O. ; Bobylev, A.V. ; Feng, Z.C.
Author_Institution
A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
fYear
2012
fDate
23-28 Sept. 2012
Firstpage
1
Lastpage
2
Abstract
We report on terahertz emission from n-GaN films under steady state interband photoexcitation at low temperatures. The properties of the terahertz photoluminescence allow us to conclude that the emission occur under capture of nonequilibrium electrons to ionized donor centers.
Keywords
III-V semiconductors; gallium compounds; photoexcitation; photoluminescence; semiconductor epitaxial layers; silicon; terahertz wave spectra; wide band gap semiconductors; GaN:Si; continuous-wave interband excitation; epitaxial layers; ionized donor centers; n-GaN films; nonequilibrium electrons; steady state interband photoexcitation; terahertz emission; terahertz photoluminescence properties; Electric breakdown; Gallium nitride; Impurities; Optical scattering; Photoluminescence; Silicon; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location
Wollongong, NSW
ISSN
2162-2027
Print_ISBN
978-1-4673-1598-2
Electronic_ISBN
2162-2027
Type
conf
DOI
10.1109/IRMMW-THz.2012.6379503
Filename
6379503
Link To Document