Title :
Silver chalcogenide based memristor devices
Author :
Oblea, Antonio S. ; Timilsina, Achyut ; Moore, David ; Campbell, Kristy A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Boise State Univ., Boise, ID, USA
Abstract :
We have fabricated two-terminal chalcogenide-based devices containing Ge2Se3 and Ag that function as memristors. These devices have been electrically characterized at room temperature using quasi-static DC methods, AC sinusoidal methods, and AC pulse testing methods. In all cases, the devices exhibit memristive behavior.
Keywords :
chalcogenide glasses; germanium compounds; memristors; silver; AC pulse testing methods; AC sinusoidal methods; Ag; Ge2Se3; fabricated two-terminal chalcogenide-based devices; memristor devices; quasi-static DC methods; silver chalcogenide; temperature 293 K to 298 K; Electrodes; Materials; Memristors; Programming; Resistance; Temperature measurement; Threshold voltage; Memory Device; Memristor; Thin Film Devices;
Conference_Titel :
Neural Networks (IJCNN), The 2010 International Joint Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-6916-1
DOI :
10.1109/IJCNN.2010.5596775
