• DocumentCode
    2494921
  • Title

    Asymmetrical Doherty power amplifiers for LTE-Advanced systems

  • Author

    Sun, Chao ; Liu, Taijun ; Ye, Yan ; Zhang, Ying ; Luo, Xiaojun ; Lin, Hao

  • Author_Institution
    Coll. of Inf. Sci. & Eng., Ningbo Univ., Ningbo, China
  • Volume
    4
  • fYear
    2012
  • fDate
    5-8 May 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, the optimization approach of a wideband and high efficiency asymmetrical Doherty power amplifier (ADPA) for LTE-Advanced systems was presented. The ADPA using the different LDMOS devices and an uneven power divider achieves constant efficiency at more than 6 dB output power back-off. The radial stubs and duplicate supply are utilized in the dc bias network to increase the bandwidth of the ADPA. The carrier amplifier (MRF8S19140) and the peaking amplifier (MRF8S19260) operate at class-AB and class-C respectively. Through ADS optimization design, the power added efficiency (PAE) is 59.064% when the maximum output power reaches 57.1 dBm at 1950MHz. At 8.5dB back-off point, the PAE is 51%. The bandwidth of the ADPA is about 145MHz ranging from 1880MHz to 2025 MHz, maintaining the gain flatness lower than ±0.5dB in small signal mode. The PAE in the whole band basically remains 45% or more for medium power level.
  • Keywords
    Long Term Evolution; UHF power amplifiers; circuit optimisation; power dividers; wideband amplifiers; ADPA; ADS optimization design; LDMOS devices; LTE-advanced systems; MRF8S19140 carrier amplifier; MRF8S19260 peaking amplifier; PAE; asymmetrical Doherty power amplifiers; back-off point; class-AB amplifier; class-C amplifier; dc bias network; efficiency 51 percent; efficiency 59.064 percent; frequency 1880 MHz to 2025 MHz; medium power level; optimization approach; power added efficiency; power divider; radial stubs; small signal mode; wideband power amplifier; Communication systems; Educational institutions; Impedance; Power amplifiers; Power dividers; Power generation; Reactive power;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
  • Conference_Location
    Shenzhen
  • Print_ISBN
    978-1-4673-2184-6
  • Type

    conf

  • DOI
    10.1109/ICMMT.2012.6230281
  • Filename
    6230281