Title :
Novel wide band gap devices using strain energy band engineering
Author :
Shur, Michael S. ; Gaska, Remis ; Khan, Asif
Abstract :
Strain and polarization control achieved via strain energy band engineering is the key for achieving stable and reliable operation of wide bad gap devices. In this paper, we consider the application of this approach to novel AlN/GaN/InN-based field effect transistors and ultraviolet light emitting diodes.
Keywords :
III-V semiconductors; field effect transistors; gallium compounds; light emitting diodes; semiconductor device reliability; ultraviolet detectors; wide band gap semiconductors; AlN-GaN-InN; field effect transistors; heterostructures; nitrides; polarization control; strain energy band engineering; ultraviolet light emitting diodes; wide band gap devices; Aluminum gallium nitride; Artificial intelligence; Capacitive sensors; Gallium nitride; Heterojunctions; Lattices; Optical polarization; Power engineering and energy; Strain control; Wideband;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN :
0-7803-7904-7
DOI :
10.1109/EDMO.2003.1259960
