Title :
SiGe HBT technology design approaches for RF-applications
Author :
Ostling, Mikael ; Malm, B. Gunnar
Author_Institution :
Dept. of Microelectronivs & Inf. Technol., KTH-R. Inst. of Technol., KISTA, Sweden
Abstract :
In this paper the current status of SiGe bipolar technologies for high-speed and wireless applications is discussed. The key process features and RF performance of advanced SiGe bipolar processes are summarized. In particular the importance of carbon doping for improved doping profile control and self-aligned structures for reduced device parasitics is discussed. As an example of advanced process features a novel collector structure, using selective epitaxy is presented. Optimization of device RF performance is also discussed, and in particular the RF-distortion. A mixed-mode device and circuit simulation methodology has been used to investigate the influence of collector doping and Ge-profiles on the intermodulation distortion.
Keywords :
circuit simulation; elemental semiconductors; germanium compounds; heterojunction bipolar transistors; mobile communication; radiofrequency integrated circuits; semiconductor doping; silicon compounds; HBT technology; RF applications; RF distortion; SiGe; carbon doping; circuit simulation; collector doping; collector structure; device optimization; doping profile control; high-speed applications; intermodulation distortion; mixed-mode device; reduced device parasitics; selective epitaxy; self-aligned structures; wireless applications; BiCMOS integrated circuits; CMOS technology; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Optical distortion; Parasitic capacitance; Radio frequency; Silicon germanium;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN :
0-7803-7904-7
DOI :
10.1109/EDMO.2003.1259975
