Title :
800-nA Process-and-Voltage-Invariant 106-dB PSRR PTAT Current Reference
Author :
Amaravati, Anvesha ; Dave, Mayank ; Baghini, Maryam Shojaei ; Sharma, D.K.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol.-Bombay, Mumbai, India
Abstract :
This brief presents a novel process-and-voltage-invariant proportional to absolute temperature (PTAT) current reference. The proposed circuit is designed and fabricated in 180-nm mixed-mode CMOS technology. Measurement results show that the IPTAT varies only by ±2.4% (±3σ/mean) across 18 test chips. One thousand Monte Carlo simulation runs show that the maximum deviation (±3σ/mean) from the desired value of the PTAT current is ±5.4%. The proposed PTAT current reference uses a process, voltage, and temperature (PVT)-invariant resistor circuit having RON variation reduced by 4.2 times, as compared to a fixed biased MOSFET. The proposed PTAT current reference draws only 800-nA current from the supply voltage and also exhibits a high dc power supply rejection ratio (PSRR) of 106 dB. This brief also presents a PVT-invariant transconductance using the implemented PVT-invariant resistor.
Keywords :
CMOS integrated circuits; Monte Carlo methods; reference circuits; resistors; Monte Carlo simulation; PSRR; PVT-invariant resistor circuit; PVT-invariant transconductance; current 800 nA; fixed biased MOSFET; high DC power supply rejection ratio; mixed-mode CMOS technology; process-and-voltage-invariant PSRR PTAT current reference; process-voltage-and temperature invariant resistor circuit; proportional-to-absolute temperature current reference; size 180 nm; Process and temperature tolerance; proportional to absolute temperature (PTAT) current; resistor; transconductance;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2013.2268435