Speed-enhanced OEIC with area-efficient charge pump and shunt regulator

Author

Swoboda, R. ; Knorr, J. ; Zimmermann, H.

Author_Institution

Vienna Univ. of Technol., Inst. of Electr. Measurements & Circuit Design, Vienna, Austria

fYear

2003

fDate

17-18 Nov. 2003

Firstpage

66

Lastpage

70

Abstract

The bandwidth of the photodiode in an optoelectronic integrated circuit with a single 5 V supply is extended from 20MHz to 771MHz by an innovative on-chip voltage-up-converter. A shunt-regulator keeps the die are small and exploits breakdown voltages of available devices best. Rise and fall times below 0.5ns are achieved allowing operation at data rates in excess of 1Gbits/s. A possible receiver sensitivity of -22.5 dBm is obtained for a wavelength of 670nm.

Keywords

convertors; integrated optoelectronics; leakage currents; semiconductor device breakdown; voltage multipliers; voltage regulators; 20 to 771 MHz; 67E9 m; area-efficient charge pump; breakdown voltages; on-chip voltage-up-converter; optoelectronic integrated circuit; photodiode bandwidth; receiver sensitivity; shunt regulator; speed-enhanced OEIC; Bandwidth; BiCMOS integrated circuits; Charge pumps; Clocks; Diodes; Frequency; Low voltage; Optoelectronic devices; Photodiodes; Regulators;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on

Print_ISBN

0-7803-7904-7

Type

conf

DOI

10.1109/EDMO.2003.1259981

Filename

1259981