Title :
Doherty power amplifier linearization with augmented Hammerstein model for LTE systems
Author :
Lin, Hao ; Liu, Taijun ; Ye, Yan ; Luo, Xiaojun ; Cao, Gang ; Sun, Chao
Author_Institution :
Coll. of Inf. Sci. & Eng., Ningbo Univ., Ningbo, China
Abstract :
In this paper, an augmented Hammerstein nonlinear model based digital pre-distortion (DPD) is utilized to linearize a Doherty power amplifier(DPA) for Long Term Evolution(LTE) system. The architecture of the augmented Hammerstein nonlinear model can be easily implement in Field Programmable Gate (FPGA). The model is composed of a look up table (LUT) and two finite impulse response (FIR) filters. Moreover, a digital predistortion platform is built to validate the effectiveness of the nonlinear model for linearizing the DPA for the LTE system. Based on the constructed platform, the accuracy of the augmented Hammerstein model is compared with those of memory polynomial (MP) model and LUT model by using a 90-W peak envelop power LDMOS field-effect-transistor Doherty power amplifier, which is driven by a LTE signal of 20MHz bandwidth and 10dB peak to average power ration (PAPR).
Keywords :
FIR filters; Long Term Evolution; field programmable gate arrays; microwave power amplifiers; polynomials; power MOSFET; table lookup; Doherty power amplifier linearization; FIR filters; FPGA; LTE systems; Long Term Evolution; augmented Hammerstein nonlinear model; bandwidth 20 MHz; digital pre-distortion; field programmable gate; finite impulse response filters; look up table; memory polynomial model; power LDMOS field-effect-transistor; Finite impulse response filter; Mathematical model; Peak to average power ratio; Polynomials; Predistortion; Table lookup;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
DOI :
10.1109/ICMMT.2012.6230311