Numerical simulation of GaN HEMTs with local doping barrier layer

Author

Fu, Wenli ; Xu, Yuehang ; Yan, Bo ; Guo, Yunchuan ; Xu, Ruimin

Author_Institution

Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China (UESTC), Chengdu, China

Volume

4

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

4

Abstract

GaN HEMT with local doping barrier layer is proposed in this paper. The DC and RF characteristics are analyzed by using 2D numerical simulation. The results show that the breakdown voltage is 25% larger than that of the conventional structure due to the extension of depleted layer width between gate and drain electrodes. A theoretical maximum output power density of 14.6W/mm has been achieved, which is ~34% larger than conventional structure. And the RF simulation results show that the proposed GaN HEMT also improved the maximum stable gain by 1dB up to 70GHz due to the decrease of the gate-drain capacitance.

Keywords

III-V semiconductors; electrodes; gallium compounds; high electron mobility transistors; semiconductor doping; wide band gap semiconductors; 2D numerical simulation; DC characteristics; GaN; HEMT; RF characteristics; breakdown voltage; depleted layer extension; drain electrodes; gate electrodes; gate-drain capacitance; local doping barrier layer; power density; Aluminum gallium nitride; Doping; Electric fields; Gallium nitride; HEMTs; Logic gates; MODFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6230313

Filename

6230313