• DocumentCode
    2495763
  • Title

    An overview of device behavior and modeling of CMOS technology for RF IC design

  • Author

    Cheng, Yuhua

  • Author_Institution
    Skyworks Solutions Inc., Irvine, CA, USA
  • fYear
    2003
  • fDate
    17-18 Nov. 2003
  • Firstpage
    109
  • Lastpage
    114
  • Abstract
    This paper overviews the MOS downscaling and device behavior in RF CMOS technology, which is an attractive potential process candidate for wireless communication applications. The impact of downscaling of CMOS technology to the RF applications will be discussed first. Then the trend of the device performance will be summarized to understand the device behavior better for RF design requirements. Several important figure-of-merits for MOS transistors such as cutoff frequency (fmax, noise figure (NF) and linearity etc. will be analyzed together with the discussion of other device behavior to explore the details of RF CMOS technology. Modeling issues are also introduced to develop good RF models for RF circuit optimization.
  • Keywords
    CMOS analogue integrated circuits; circuit optimisation; mobile communication; radiofrequency integrated circuits; wireless LAN; MOS downscaling; MOS transistors; RF CMOS technology; RF IC design; RF circuit optimization; cutoff frequency; device performance; integrated circuit device modeling; linearity; noise figure; wireless communication; CMOS integrated circuits; CMOS process; CMOS technology; Cutoff frequency; Integrated circuit modeling; MOSFETs; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
  • Print_ISBN
    0-7803-7904-7
  • Type

    conf

  • DOI
    10.1109/EDMO.2003.1260002
  • Filename
    1260002