DocumentCode
2495763
Title
An overview of device behavior and modeling of CMOS technology for RF IC design
Author
Cheng, Yuhua
Author_Institution
Skyworks Solutions Inc., Irvine, CA, USA
fYear
2003
fDate
17-18 Nov. 2003
Firstpage
109
Lastpage
114
Abstract
This paper overviews the MOS downscaling and device behavior in RF CMOS technology, which is an attractive potential process candidate for wireless communication applications. The impact of downscaling of CMOS technology to the RF applications will be discussed first. Then the trend of the device performance will be summarized to understand the device behavior better for RF design requirements. Several important figure-of-merits for MOS transistors such as cutoff frequency (fmax, noise figure (NF) and linearity etc. will be analyzed together with the discussion of other device behavior to explore the details of RF CMOS technology. Modeling issues are also introduced to develop good RF models for RF circuit optimization.
Keywords
CMOS analogue integrated circuits; circuit optimisation; mobile communication; radiofrequency integrated circuits; wireless LAN; MOS downscaling; MOS transistors; RF CMOS technology; RF IC design; RF circuit optimization; cutoff frequency; device performance; integrated circuit device modeling; linearity; noise figure; wireless communication; CMOS integrated circuits; CMOS process; CMOS technology; Cutoff frequency; Integrated circuit modeling; MOSFETs; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN
0-7803-7904-7
Type
conf
DOI
10.1109/EDMO.2003.1260002
Filename
1260002
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