Title :
Multi-gate 3-D SOI MOSFETs as the mainstream technology in high speed CMOS applications
Author :
Ortiz-Conde, Adelmo ; Sánchez, Francisco J García
Author_Institution :
Laboratorio de Electronica del Estado Solido, Univ. Simon Bolivar, Caracas, Venezuela
Abstract :
We review the origins, recent developments and present status of silicon-on-insulator (SOI) MOSFET technology which is becoming the technology of choice in mainstream CMOS circuits for VLSI as well as for other high frequency applications in the low-GHz range. The different basic multi-gate three dimensional SOI structures that are especially amenable to high speed operation are analyzed, compared and discussed.
Keywords :
CMOS integrated circuits; MOSFET; VLSI; silicon-on-insulator; CMOS applications; CMOS circuits; RF MOSFET; SOI MOSFET technology; VLSI; high speed MOSFET; microwave MOSFET; multigate 3D SOI MOSFET; CMOS technology; Integrated circuit interconnections; Large-scale systems; MOSFETs; Microprocessors; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon on insulator technology; Very large scale integration;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN :
0-7803-7904-7
DOI :
10.1109/EDMO.2003.1260004
