Title :
Soft breakdown on deep sub-micrometer RF nMOSFET performance
Author :
Liu, Yi ; Sadat, Anwar ; Yuan, J.S. ; Yang, Hong
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Central Florida Univ., Orlando, FL, USA
Abstract :
Soft breakdown stress on CMOS RF devices has been examined. The total gate capacitance decreases with stress. The analytical equation of cut-off frequency including the gate oxide breakdown is derived. The effect of soft breakdown on the performance of an LC oscillator is examined. The oscillation frequency of the LC oscillator increases after soft breakdown stress.
Keywords :
CMOS integrated circuits; MOSFET; leakage currents; radiofrequency integrated circuits; semiconductor device breakdown; CMOS RF devices; LC oscillator; cut-off frequency; deep submicrometer RF nMOSFET; gate capacitance; gate oxide breakdown; nMOSFET performance; oscillation frequency; soft breakdown stress; Breakdown voltage; CMOS technology; Cutoff frequency; Degradation; Electric breakdown; Equations; MOSFET circuits; Oscillators; Radio frequency; Stress;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN :
0-7803-7904-7
DOI :
10.1109/EDMO.2003.1260006
