Use of MeV ion implantations for isolation of GaAs and InP-based HBTs

Author

Rezazadeh, Ali A.

Author_Institution

Dept. of Electr. Eng. & Electron., UMIST, Manchester, UK

fYear

2003

fDate

17-18 Nov. 2003

Firstpage

139

Lastpage

144

Abstract

He⁺ and Fe⁺ ion bombardments in the electrical isolation of InGaP/GaAs and InP/InGaAs HBT structures are presented. Highly resistive regions (∼10⁸ Ω/sq) in GaAs-based HBTs can be created using only He-ion bombardment at room temperature. However, in contrast to GaAs, heavier ions such as Fe-ions are able to produce high electrical isolation (∼5×10⁶Ω/sq) only at 77K bombardment. This is very close to the intrinsic value for n-InGaAs (∼1×10⁷ Ω/sq) and has potential applications in the fabrication of InP-based HBTs with planar geometry designs.

Keywords

III-V semiconductors; gallium arsenide; helium; heterojunction bipolar transistors; indium compounds; ion implantation; iron; isolation technology; semiconductor device manufacture; Fe; HBT structures; He; InGaP-GaAs; MeV ion implantations; electrical isolation; heterojunction bipolar transistors; ion bombardments; planar geometry designs; resistive regions; room temperature; Annealing; Contact resistance; Electrical resistance measurement; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Implants; Indium gallium arsenide; Sheet materials; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on

Print_ISBN

0-7803-7904-7

Type

conf

DOI

10.1109/EDMO.2003.1260014

Filename

1260014