DocumentCode
2496057
Title
Silicon integrated photonics: potentials and promises
Author
Wong, Hei
Author_Institution
Dept. of Electron. Eng., City Univ. of Hong Kong, China
fYear
2003
fDate
17-18 Nov. 2003
Firstpage
145
Lastpage
150
Abstract
Silicon integrated photonics has come to light after the devotion of much effort in this area. Technologically, making waveguide structures and optical components is possible based on Si-based materials, such as silicon oxynitride or doped silica using microfabrication technology. Theoretically, emitting light from Si-based materials such as Si quantum wires/dots and Si nanoclusters embedded in an insulator is also feasible. The remaining issues are to develop processes and device structures to make Si photonics economically viable with system and device performance comparable to their existing counterparts. Recent efforts have demonstrated that the light emitting efficiency can be enhanced greatly and that the lasing effect is also possible with nanostructures. This work reviews the recent developments of these aspects.
Keywords
elemental semiconductors; integrated optoelectronics; nanoelectronics; silicon; Si; doped silica; insulator; lasing effect; light emission; light emitting efficiency; microfabrication technology; nanoclusters; nanostructures; optical components; quantum wires-dots; silicon integrated photonics; silicon oxynitride; waveguide structures; Optical devices; Optical materials; Optical waveguide components; Optical waveguide theory; Optical waveguides; Photonics; Quantum dots; Quantum mechanics; Silicon compounds; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN
0-7803-7904-7
Type
conf
DOI
10.1109/EDMO.2003.1260017
Filename
1260017
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