A novel physically based photodiode model for optoelectronic circuit simulations

Author

Naeve, T. ; Hohenbild, M. ; Seegrebrecht, P.

Author_Institution

Semicond. Electron., Kiel, Denmark

fYear

2003

fDate

17-18 Nov. 2003

Firstpage

163

Lastpage

169

Abstract

In this work we present a new physically based electrical equivalent circuit (EEC) of a photodiode. This EEC is capable to correctly predict the behaviour of the diode and can be used as a macro model in circuit simulation programs for dc, ac and transient simulations. Our model includes drift and diffusion currents of the photodiode. The EEC is versatile and can be used in many different applications. The effectiveness of the proposed macro model is highlighted by comparing results of the model with those of numerical device simulation.

Keywords

circuit simulation; equivalent circuits; optoelectronic devices; photodiodes; semiconductor device models; EEC; circuit simulation programs; diffusion currents; diode behaviour; drift current; electrical equivalent circuit; numerical device simulation; optoelectronic circuit simulation; photodiode model; Circuit simulation; Electrons; Equivalent circuits; Integrated optics; Photodiodes; Power system modeling; Predictive models; Semiconductor diodes; Space charge; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on

Print_ISBN

0-7803-7904-7

Type

conf

DOI

10.1109/EDMO.2003.1260025

Filename

1260025