Title :
Monolithically integrated In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As MSM-HEMT receiver grown by OMCVD on patterned InP substrates
Author :
Hong, W.P. ; Chang, G.-K. ; Bhat, R. ; Gimlett, J.L. ; Nguyen, C.K. ; Sasaki, G. ; Koza, M.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
A long-wavelength receiver OEIC (optoelectronic integrated circuit) comprising an InAlAs-InGaAs MSM (metal-semiconductor-metal) detector and a InAlAs-InGaAs HEMT (high-electron mobility transistor) high-impedance preamplifier has been demonstrated. The layer structure was grown by LP-OMCVD (low-pressure organometallic chemical vapor deposition) on patterned InP substrates, which allowed independent optimization of the MSM detector and the HEMT preamplifier. The MSM detector showed the lowest leakage current (1 nA) ever reported with a 0.42 A/W responsivity, and the HEMT exhibited an external transconductance of 260 mS/mm. The bandwidth of the MSM-HEMT receiver was about 2 GHz. An excellent receiver response to 1.7 Gb/s NRZ random input signals has been obtained. The results reported strongly suggest that MSM-HEMT receivers have great potential for high-bit-rate optical-fiber communication systems.<>
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; photodetectors; receivers; substrates; 1 nA; 1.7 Gbit/s; 2 GHz; HEMT; HEMT preamplifier; InAlAs-InGaAs; InP substrates; MSM; MSM detector; MSM-HEMT receivers; OEIC; OMCVD; bandwidth; high-bit-rate optical-fiber communication systems; high-electron mobility transistor; high-impedance preamplifier; independent optimization; leakage current; long-wavelength receiver; metal-semiconductor-metal; optoelectronic integrated circuit; organometallic chemical vapor deposition; responsivity; transconductance; Chemical vapor deposition; Detectors; HEMTs; Indium phosphide; Leak detection; Leakage current; MODFETs; Optical receivers; Optoelectronic devices; Preamplifiers;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74159
