Title :
Application of the Magnetoresistive Tensor Model to the Hard Axis Behavior of 81/19 Permalloy Magnetoresistive Sensor Elements
Author :
Haji-Sheikh, Michael ; Yoo, Y.Z.
Author_Institution :
Northern Illinois Univ., De Kalb
Abstract :
Hard axis (HA) behavioral models for magnetoresistive sensors (from highly ordered thin films) often are developed in such a fashion as to concentrate on the HA behavior only. This work uses a tensor based approach and a single domain concept to demonstrate how to calculate the magnetoresistance (AMR) for a given resistor and concentrates on the in-plane AMR only.
Keywords :
Permalloy; magnetic sensors; magnetoresistance; magnetoresistive devices; AMR; Permalloy magnetoresistive sensor elements; hard axis behavior; magnetoresistance; magnetoresistive tensor model; single domain model; Anisotropic magnetoresistance; Conductivity; Equations; Magnetic sensors; Magnetization; Resistors; Tensile stress; Thin film sensors; Transistors; USA Councils;
Conference_Titel :
Sensors, 2006. 5th IEEE Conference on
Conference_Location :
Daegu
Print_ISBN :
1-4244-0375-8
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2007.355620
