Title :
CMOS RF device and circuit reliability
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Central Florida Univ., Orlando, FL, USA
Abstract :
The paper addresses CMOS device reliability such as hot carrier stress and gate oxide breakdown and their effects on RF circuit performance. Device experimental data and circuit simulation are presented. Methodology to design reliable RF circuits is also discussed.
Keywords :
CMOS integrated circuits; circuit simulation; hot carriers; integrated circuit reliability; radiofrequency integrated circuits; CMOS RF device; RF circuit performance; RF circuits; circuit reliability; circuit simulation; design methodology; gate oxide breakdown; hot carrier stress; CMOS technology; Circuit optimization; Cutoff frequency; Degradation; Electric breakdown; Integrated circuit reliability; Interface states; MOSFET circuits; Radio frequency; Thermal stresses;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN :
0-7803-7904-7
DOI :
10.1109/EDMO.2003.1260034
