Reliability of polyimide-based thin and flexible capacitors with SrTiO3

Author

Ishii, Yasuhiro ; Mori, Torn ; Shibuya, Akinobu ; Takemura, Koichi

Author_Institution

NEC Glass Components, Ltd., Sagamihara

fYear

2008

fDate

1-2 Dec. 2008

Firstpage

131

Lastpage

134

Abstract

The reliability of polyimide (PI)-based flexible capacitors as discrete components was evaluated. A Pt/SrTiO₃ (STO)/Pt/Ti/Mo/Ti metal-insulator-metal structure is formed on PI and covered with resin. The 300-nm-thick STO layer is sputter-deposited at 400degC and the dielectric constant is approximately 140. The total thickness of the capacitor is 40 mum. Under various stresses, such as thermal cycles, high humidity, reflow process, and bending, the capacitance change is within plusmn3% and the dielectric breakdown voltage higher than 100 V is maintained. Therefore, the PI-based STO capacitors are reliable and flexible enough for practical use on and in printed circuit boards.

Keywords

MIM devices; electric breakdown; molybdenum; permittivity; platinum; reliability; sputter deposition; strontium compounds; thin film capacitors; titanium; Pt-SrTiO₃-Pt-Ti-Mo-Ti; bending; capacitance change; dielectric breakdown voltage; dielectric constant; flexible capacitors; humidity; metal-insulator-metal structure; polyimide-based thin capacitors; printed circuit boards; reflow process; reliability; size 300 nm; size 40 mum; sputter deposition; temperature 400 degC; thermal cycles; Breakdown voltage; Capacitance; Dielectric breakdown; Dielectric constant; Humidity; MIM capacitors; Metal-insulator structures; Polyimides; Resins; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Packaging Workshop of Japan, 2008. VPWJ 2008. IEEE 9th

Conference_Location

Kyoto

Print_ISBN

978-1-4244-3498-5

Type

conf

DOI

10.1109/VPWJ.2008.4762232

Filename

4762232