Title :
Reliability of polyimide-based thin and flexible capacitors with SrTiO3
Author :
Ishii, Yasuhiro ; Mori, Torn ; Shibuya, Akinobu ; Takemura, Koichi
Author_Institution :
NEC Glass Components, Ltd., Sagamihara
Abstract :
The reliability of polyimide (PI)-based flexible capacitors as discrete components was evaluated. A Pt/SrTiO3 (STO)/Pt/Ti/Mo/Ti metal-insulator-metal structure is formed on PI and covered with resin. The 300-nm-thick STO layer is sputter-deposited at 400degC and the dielectric constant is approximately 140. The total thickness of the capacitor is 40 mum. Under various stresses, such as thermal cycles, high humidity, reflow process, and bending, the capacitance change is within plusmn3% and the dielectric breakdown voltage higher than 100 V is maintained. Therefore, the PI-based STO capacitors are reliable and flexible enough for practical use on and in printed circuit boards.
Keywords :
MIM devices; electric breakdown; molybdenum; permittivity; platinum; reliability; sputter deposition; strontium compounds; thin film capacitors; titanium; Pt-SrTiO3-Pt-Ti-Mo-Ti; bending; capacitance change; dielectric breakdown voltage; dielectric constant; flexible capacitors; humidity; metal-insulator-metal structure; polyimide-based thin capacitors; printed circuit boards; reflow process; reliability; size 300 nm; size 40 mum; sputter deposition; temperature 400 degC; thermal cycles; Breakdown voltage; Capacitance; Dielectric breakdown; Dielectric constant; Humidity; MIM capacitors; Metal-insulator structures; Polyimides; Resins; Thermal stresses;
Conference_Titel :
VLSI Packaging Workshop of Japan, 2008. VPWJ 2008. IEEE 9th
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-3498-5
DOI :
10.1109/VPWJ.2008.4762232
