Title :
Recent advances in GaN HEMT development
Author :
Schwierz, F. ; Ambacher, Oliver
Author_Institution :
Inst. fur Festkorperelektronik, Technische Univ. Ilmenau, Germany
Abstract :
GaN HEMTs show great potential for RF applications. This paper provides an overview on the current status of GaN HEMT technology. It discusses the relevant properties of the AlGaN/GaN material system. Describes the evolution of GaN HEMTs during the last 10 years, and highlights the state of the art performance of these transistors. A comparison with competing HEMT type is made and the prospects of commercial GaN HEMTs are discussed.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; radiofrequency integrated circuits; AlGaN; HEMT technology; RF applications; high electron mobility transistors; Aluminum gallium nitride; Conducting materials; Cutoff frequency; Electrons; Gallium nitride; HEMTs; Heterojunctions; Piezoelectric polarization; Radio frequency; Semiconductor materials;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN :
0-7803-7904-7
DOI :
10.1109/EDMO.2003.1260049
