Thermal processing effects in proton-isolated n-type GaAs devices

Author

Ahmed, S. ; Amirov, K. ; Larsson, U. ; Too, P. ; Sealy, B.J. ; Gwilliam, R.

Author_Institution

Adv. Technol. Inst., Surrey Univ., Guildford, UK

fYear

2003

fDate

17-18 Nov. 2003

Firstpage

210

Lastpage

216

Abstract

In this paper we present the results of two new experiments: (1) infrared reflectivity (IR) measurements of the thickness of the modified layers following the proton implantation in n-type GaAs layers at various implant temperatures; and (2) a detailed study of the thermal stability of n-type GaAs layers isolated by proton implantation. It is found that the threshold dose (minimum implant dose required for a maximum sheet resistivity) for a device is a key parameter to obtain good thermal stability. The optical properties also depend on the implantation temperature and dose.

Keywords

III-V semiconductors; gallium arsenide; infrared spectra; ion implantation; proton effects; reflectivity; thermal stability; GaAs; implantation temperature; infrared reflectivity measurements; maximum sheet resistivity; n-type layers; proton implantation; proton-isolated n-type devices; thermal processing effects; thermal stability; threshold dose; Annealing; Etching; Gallium arsenide; Implants; Optical buffering; Optical materials; Particle beam optics; Plasma temperature; Protons; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on

Print_ISBN

0-7803-7904-7

Type

conf

DOI

10.1109/EDMO.2003.1260051

Filename

1260051